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| PD - 95036 IRGR3B60KD2PBF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C * Low VCE (on) Non Punch Through IGBT Technology. * Low Diode VF. * 10s Short Circuit Capability. * Square RBSOA. * Ultrasoft Diode Reverse Recovery Characteristics. * Positive VCE (on) Temperature Coefficient. * Lead-Free VCES = 600V IC = 4.2A, TC=100C G E tsc > 10s, TJ=150C Benefits * Benchmark Efficiency for Motor Control. * Rugged Transient Performance. * Low EMI. * Excellent Current Sharing in Parallel Operation. n-channel VCE(on) typ. = 1.9V D-Pak Absolute Maximum Ratings Parameter VCES IC @ TC = 25C IC @ TC = 100C ICM ILM IF @ Tc = 25C IF @ Tc = 100C IFM VGE PD @ TC = 25C Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulse Collector Current (Ref.Fig.C.T.5) Clamped Inductive Load current Max. 600 7.8 4.2 15.6 15.6 6.0 3.2 15.6 20 52 21 -55 to +150 Units V A c Diode Continous Forward Current Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation V W PD @ TC = 100C Maximum Power Dissipation Operating Junction and TJ TSTG Storage Temperature Range Soldering Temperature Range, for 10 sec. C 300 (0.063 in. (1.6mm) from case) Thermal / Mechanical Characteristics Parameter RJC RJC RJA Wt Junction-to-Case- IGBT Junction-to-Case- Diode Junction-to-Ambient, (PCB Mount) Weight Min. --- Typ. --- --- --- 0.3 Max. 2.4 8.8 50 --- Units C/W d --- --- --- g www.irf.com 1 2/23/04 Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter Min. Typ. Max. Units -- 0.32 1.9 2.2 4.5 -8.5 1.9 1.0 200 1.5 1.5 -- -- -- 2.4 2.6 5.5 -- -- 150 500 1.8 1.8 100 IRGR3B60KD2PBF Conditions Ref.Fig. V(BR)CES Collector-to-Emitter Breakdown Voltage 600 V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage -- VCE(on) Collector-to-Emitter Voltage -- -- VGE(th) Gate Threshold Voltage 3.5 VGE(th)/TJ Threshold Voltage temp. coefficient -- gfe ICES VFM IGES Forward Transconductance Zero Gate Voltage Collector Current Diode Forward Voltage Drop Gate-to-Emitter Leakage Current -- -- -- -- -- -- V VGE = 0V, IC = 500A V/C VGE = 0V, IC = 1mA (25C-150C) IC = 3.0A, VGE = 15V V IC = 3.0A, VGE = 15V, TJ = 150C VCE = VGE, IC = 250A 5,6,7 9,10,11 9,10,11 12 mV/C VCE = VGE, IC = 1mA (25C-150C) S VCE = 50V, IC = 3.0A, PW = 80s A V nA VGE = 0V, VCE = 600V VGE = 0V, VCE = 600V, TJ = 150C IF = 3.0A, VGE = 0V IF = 3.0A, VGE = 0V, TJ = 150C VGE = 20V, VCE = 0V 8 Switching Characteristics @ TJ = 25C (unless otherwise specified) Parameter Qg Qge Qgc Eon Eoff Etot td(on) tr td(off) tf Eon Eoff Etot td(on) tr td(off) tf Cies Coes Cres RBSOA SCSOA Erec trr Total Gate Charge (turn-on) Gate-to-Emitter Charge (turn-on) Gate-to-Collector Charge (turn-on) Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Input Capacitance Output Capacitance Reverse Transfer Capacitance Reverse Bias Safe Operating Area Short Circuit Safe Operating Area Reverse Recovery Energy of the Diode Min. Typ. Max. Units -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 13 1.5 6.6 62 39 100 18 15 110 68 91 98 190 18 17 120 91 190 23 6.6 20 2.3 9.9 75 50 120 22 21 120 80 100 140 230 22 22 140 105 -- -- -- pF ns J J IC = 3.0A nC VCC = 400V VGE = 15V Conditions Ref.Fig. 23 CT1 IC = 3.0A, VCC = 400V VGE = 15V, RG = 100, L = 2.5mH TJ = 25C IC = 3.0A, VCC = 400V CT4 e ns VGE = 15V, RG = 100, L = 2.5mH TJ = 25C IC = 3.0A, VCC = 400V VGE = 15V, RG = 100, L = 2.5mH TJ = 150C IC = 3.0A, VCC = 400V VGE = 15V, RG = 100, L = 2.5mH TJ = 150C VGE = 0V VCC = 30V f = 1.0MHz TJ = 150C, IC = 15.6A, Vp = 600V CT4 CT4 13,15 WF1,WF2 14,16 CT4 WF1 WF2 e 22 FULL SQUARE 10 -- -- s 4 CT2 CT3 WF4 VCC=500V,VGE=+15V to 0V,RG = 100 TJ = 150C, Vp = 600V, RG = 100 VCC=360V,VGE = +15V to 0V TJ = 150C 17,18,19 -- 38 44 J 20,21 Diode Reverse Recovery Time -- 77 84 ns VCC = 400V, IF = 3.0A, L = 2.5mH Irr Diode Peak Reverse Recovery Current -- 4.8 5.3 A VGE = 15V, RG = 100 CT4,WF3 Energy losses include "tail" and diode reverse recovery. VCC = 80% (VCES), VGE = 15V, L = 100H, RG = 100. When mounted on 1" square PCB (FR-4 or G-10 Material ) . For recommended footprint and soldering techniques refer to application note #AN-994. 2 www.irf.com IRGR3B60KD2PBF 10 60 50 40 Ptot (W) 0 20 40 60 80 100 120 140 160 8 6 IC (A) 30 20 4 2 10 0 0 20 40 60 80 100 120 140 160 T C (C) 0 T C (C) Fig. 1 - Maximum DC Collector Current vs. Case Temperature Fig. 2 - Power Dissipation vs. Case Temperature 100 100 10 10 s IC (A) 10 IC A) 1 100 s 1ms 1 0.1 10ms DC 0.01 1 10 100 VCE (V) 1000 10000 0 10 100 VCE (V) 1000 Fig. 3 - Forward SOA TC = 25C; TJ 150C Fig. 4 - Reverse Bias SOA TJ = 150C; VGE =15V www.irf.com 3 IRGR3B60KD2PBF 25 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V ICE (A) 25 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V 20 20 ICE (A) 15 15 10 10 5 5 0 0 2 4 6 VCE (V) 8 10 12 0 0 2 4 6 VCE (V) 8 10 12 Fig. 5 - Typ. IGBT Output Characteristics TJ = -40C; tp = 80s Fig. 6 - Typ. IGBT Output Characteristics TJ = 25C; tp = 80s 25 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V 25 -40C 25C 150C 20 20 ICE (A) 15 15 IF (A) 10 10 5 5 0 0 2 4 6 VCE (V) 8 10 12 0 0.0 1.0 2.0 VF (V) 3.0 4.0 Fig. 7 - Typ. IGBT Output Characteristics TJ = 150C; tp = 80s Fig. 8 - Typ. Diode Forward Characteristics tp = 80s 4 www.irf.com IRGR3B60KD2PBF 20 18 16 14 20 18 16 14 VCE (V) ICE = 1.5A ICE = 3.0A ICE = 6.0A VCE (V) 12 10 8 6 4 2 0 5 10 VGE (V) 12 10 8 6 4 2 0 ICE = 1.5A ICE = 3.0A ICE = 6.0A 15 20 5 10 VGE (V) 15 20 Fig. 9 - Typical VCE vs. VGE TJ = -40C Fig. 10 - Typical VCE vs. VGE TJ = 25C 20 18 16 14 VCE (V) ID, Drain-to-Source Current () 25 20 T J = 25C 12 10 8 6 4 2 0 5 10 VGE (V) ICE = 1.5A ICE = 3.0A ICE = 6.0A 15 T J = 150C 10 5 0 15 20 0 5 10 15 20 VGS , Gate-to-Source Voltage (V) Fig. 11 - Typical VCE vs. VGE TJ = 150C Fig. 12 - Typ. Transfer Characteristics VCE = 50V; tp = 10s www.irf.com 5 IRGR3B60KD2PBF 250 1000 200 EON Swiching Time (ns) Energy (J) 150 EOFF 100 100 tdOFF tF tR tdON 50 0 0 1 2 3 4 5 6 7 IC (A) 10 0 1 2 3 4 5 6 7 8 IC (A) Fig. 13 - Typ. Energy Loss vs. IC TJ = 150C; L=2.5mH; VCE= 400V RG= 100; VGE= 15V Fig. 14 - Typ. Switching Time vs. IC TJ = 150C; L=2.5mH; VCE= 400V RG= 100; VGE= 15V 250 1000 200 EON Swiching Time (ns) Energy (J) 150 EOFF tdOFF 100 tF 100 50 tR tdON 0 0 100 200 300 400 500 10 0 100 200 300 400 500 RG ( ) RG ( ) Fig. 15 - Typ. Energy Loss vs. RG TJ = 150C; L=2.5mH; VCE= 400V ICE= 3.0A; VGE= 15V Fig. 16 - Typ. Switching Time vs. RG TJ = 150C; L=2.5mH; VCE= 400V ICE= 3.0A; VGE= 15V 6 www.irf.com IRGR3B60KD2PBF 6 6 5 RG = 100 5 IRR (A) 4 4 RG = 200 3 IRR (A) 3 RG = 330 RG = 470 2 2 1 1 0 1 2 3 4 5 6 7 8 0 0 100 200 300 400 500 IF (A) RG () Fig. 17 - Typical Diode IRR vs. IF TJ = 150C Fig. 18 - Typical Diode IRR vs. RG TJ = 150C; IF = 3.0A 6 400 350 100 6.0A 5 300 4 Q RR (C) 250 200 150 100 IRR (A) 470 200 330 3.0A 3 2 1.5A 1 50 0 50 100 150 200 250 300 0 0 50 100 150 200 250 300 350 diF /dt (A/s) diF /dt (A/s) Fig. 19- Typical Diode IRR vs. diF/dt VCC= 400V; VGE= 15V; IF = 3.0A; TJ = 150C Fig. 20 - Typical Diode QRR VCC= 400V; VGE= 15V;TJ = 150C www.irf.com 7 IRGR3B60KD2PBF 70 100 60 200 330 470 Energy (J) 50 40 30 20 0 1 2 3 4 5 6 7 IF (A) Fig. 21 - Typical Diode ERR vs. IF TJ = 150C 1000 16 14 Cies 300V 400V 12 10 Capacitance (pF) 100 VGE (V) 40 60 80 100 Coes 10 8 6 Cres 4 2 1 0 20 0 0 2 4 6 8 10 12 14 VCE (V) Q G , Total Gate Charge (nC) Fig. 22- Typ. Capacitance vs. VCE VGE= 0V; f = 1MHz Fig. 23 - Typical Gate Charge vs. VGE ICE = 3.0A; L = 600H 8 www.irf.com IRGR3B60KD2PBF 10 Thermal Response ( Z thJC ) 1 D = 0.50 0.20 0.10 0.05 J R1 R1 J 1 2 R2 R2 C 1 2 Ri (C/W) i (sec) 0.000087 0.990 1.412 0.000426 0.1 Ci= i/Ri Ci i/Ri 0.02 0.01 SINGLE PULSE ( THERMAL RESPONSE ) Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.01 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 24. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) 100 Thermal Response ( Z thJC ) 10 D = 0.50 0.20 1 R1 R1 J 1 2 R2 R2 R3 R3 3 C 3 0.10 0.05 0.02 0.01 SINGLE PULSE ( THERMAL RESPONSE ) J Ri (C/W) i (sec) 2.301 0.000156 4.212 2.278 0.001440 0.028166 1 2 0.1 Ci= i/Ri Ci i/Ri Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.01 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE) www.irf.com 9 IRGR3B60KD2PBF L L 0 DUT 1K VCC 80 V + - DUT Rg 480V Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit Driver DC diode clamp / DUT L 360V - 5V DUT / DRIVER Rg DUT VCC Fig.C.T.3 - S.C.SOA Circuit VCC ICM Fig.C.T.4 - Switching Loss Circuit R= DUT Rg VCC Fig.C.T.5 - Resistive Load Circuit 10 www.irf.com IRGR3B60KD2PBF 600 tf 500 Vce 7.5 500 9 600 tr Vce Ice 12 11 10 9 8 7 400 90% Ice 5% Vce 5% Ice 6 400 90% Ice 10% Ice Vce (V) Ice (A) Vce (V) 5 200 4 3 200 Ice 100 3 1.5 100 5% Vce 2 1 0 -1 -2 0 Eof f Loss 0 0 Eon Loss 0.8 1 1.2 Time (uS) 1.4 -100 0.3 0.5 0.7 Time (uS) 0.9 -1.5 -100 Fig. WF1- Typ. Turn-off Loss Waveform @ TJ = 150C using Fig. CT.4 100 15 Fig. WF2- Typ. Turn-on Loss Waveform @ TJ = 150C using Fig. CT.4 500 450 50 45 0 12 400 Vce 40 35 -100 QR R tR R 10% Peak IR R 9 350 VCE (V) -200 Vf (V) 6 If (A) 250 200 150 100 25 -300 3 Ice 20 15 10 5 0 -400 Peak IR R 0 -500 -3 50 0 30 40 50 Time (uS) 60 70 -600 0.00 0.10 0.20 Time (uS) 0.30 0.40 -6 0.50 Fig. WF3- Typ. Diode Recovery Waveform @ TJ = 150C using Fig. CT.4 Fig. WF4- Typ. S.C Waveform @ TC = 150C using Fig. CT.3 www.irf.com ICE (A) 300 30 Ice (A) 300 4.5 300 6 11 IRGR3B60KD2PBF D-Pak (TO-252AA) Package Outline Dimensions are shown in millimeters (inches) 6.73 (.265) 6.35 (.250) -A5.46 (.215) 5.21 (.205) 4 6.45 (.245) 5.68 (.224) 10.42 (.410) 9.40 (.370) 0.51 (.020) MIN. LEAD ASSIGNMENTS 1 - GATE -B1.52 (.060) 1.15 (.045) 3X 2X 1.14 (.045) 0.76 (.030) 0.89 (.035) 0.64 (.025) 0.25 (.010) M AMB 2 - DRAIN 3 - SOURCE 4 - DRAIN 1.27 (.050) 0.88 (.035) 2.38 (.094) 2.19 (.086) 1.14 (.045) 0.89 (.035) 0.58 (.023) 0.46 (.018) 6.22 (.245) 5.97 (.235) 1.02 (.040) 1.64 (.025) 1 2 3 0.58 (.023) 0.46 (.018) NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2.28 (.090) 4.57 (.180) 2 CONTROLLING DIMENSION : INCH. 3 CONFORMS TO JEDEC OUTLINE TO-252AA. 4 DIMENSIONS SHOWN ARE BEFORE SOLDER DIP, SOLDER DIP MAX. +0.16 (.006). D-Pak (TO-252AA) Part Marking Information (Lead-Free) EXAMPLE: THIS IS AN IRFR120 WITH AS S EMBLY LOT CODE 1234 AS S EMBLED ON WW 16, 1999 IN T HE AS SEMBLY LINE "A" Note: "P" in assembly line pos ition indicates "Lead-Free" INT ERNAT IONAL RECTIFIER LOGO AS S EMBLY LOT CODE PART NUMBER IRFR120 12 916A 34 DAT E CODE YEAR 9 = 1999 WEEK 16 LINE A OR INTERNATIONAL RECTIFIER LOGO AS S EMBLY LOT CODE PART NUMBER IRFR120 P916A 12 34 DATE CODE P = DES IGNAT ES LEAD-FREE PRODUCT (OPT IONAL) YEAR 9 = 1999 WEEK 16 A = ASS EMBLY S ITE CODE 12 www.irf.com IRGR3B60KD2PBF D-Pak (TO-252AA) Tape & Reel Information Dimensions are shown in millimeters (inches) TR TRR TRL 16.3 ( .641 ) 15.7 ( .619 ) 16.3 ( .641 ) 15.7 ( .619 ) 12.1 ( .476 ) 11.9 ( .469 ) FEED DIRECTION 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 13 INCH 16 mm NOTES : 1. OUTLINE CONFORMS TO EIA-481. Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.02/04 www.irf.com 13 Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ |
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